RF POWER MODULE USING HETEROJUNCTION BIPOLAR TRANSISTOR

PROBLEM TO BE SOLVED: To compensate the electrical characteristics of an RF power module that depends on the changes with time, temperature dependency, variation or the like of the grounded emitter current amplification factor hFEof an HBT (heterojunction bipolar transistor). SOLUTION: In a compound semiconductor integrated circuit GaAs IC, reference current of an HBTQref for reference depending on the hFEof the HBT is supplied to the input of a first current mirror CM 1 of a bias circuit Bias Gen of a silicon semiconductor integrated circuit Si IC. An output bias current Ibias that increases in response to a reduction in the hFEof the HBT from the output of the CM 1 of the Si IC biases the base of an HBTQTOfor the output of the GaAs IC. COPYRIGHT: (C)2007,JPO&INPIT