NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device, having a structure in which optical extraction efficiency can be improved, and to provide its manufacturing method. SOLUTION: The invention is a nitride semiconductor light-emitting device comprising an n-type clad layer sequentially laminated on a substrate, an active layer, and a p-type clad layer in which the n-type clad layer comprises a first clad layer, a second clad layer, and an optical extraction layer that is arranged between the first clad layer and the second clad layer for making the light diffraction, dispersion, or diffraction and dispersion generated in the active layer, and comprising a plurality of nanopillar arrays. COPYRIGHT: (C)2007,JPO&INPIT