SAMPLE EVALUATION DEVICE AND METHOD
PROBLEM TO BE SOLVED: To evaluate the device sample formed into a thin film in a transmission electron microscope by applying voltage to the device sample to turn the device sample ready to operate. SOLUTION: A plurality of probes are provided in a focused ion beam device and voltage is freely appli...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TAKAGUCHI MASANARI TOKIDA RURIKO |
| description | PROBLEM TO BE SOLVED: To evaluate the device sample formed into a thin film in a transmission electron microscope by applying voltage to the device sample to turn the device sample ready to operate. SOLUTION: A plurality of probes are provided in a focused ion beam device and voltage is freely applied across the probes. Further, a detector for measuring the current between the probes to determine the presence of the current is provide. The probes are brought into contact with the contact plug of a semiconductor device, a deposition gas is introduced into the device, the contact position of the probes is irradiated with a focused ion beam to bond the probes to the contact plug to form a current introducing terminal. The current introducing mechanism brought into contact with the current introducing terminal to apply voltage to the current introducing terminal from outside of the electron microscope is provided to the sample holder of the electron microscope. COPYRIGHT: (C)2007,JPO&INPIT |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2007212202A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2007212202A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2007212202A3</originalsourceid><addsrcrecordid>eNrjZFAOdvQN8HFVcA1z9Al1DPH091NwcQ3zdHZVcPRzUfB1DfHwd-FhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBuZGhkZGBkaOxkQpAgCLSiLg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SAMPLE EVALUATION DEVICE AND METHOD</title><source>esp@cenet</source><creator>TAKAGUCHI MASANARI ; TOKIDA RURIKO</creator><creatorcontrib>TAKAGUCHI MASANARI ; TOKIDA RURIKO</creatorcontrib><description>PROBLEM TO BE SOLVED: To evaluate the device sample formed into a thin film in a transmission electron microscope by applying voltage to the device sample to turn the device sample ready to operate. SOLUTION: A plurality of probes are provided in a focused ion beam device and voltage is freely applied across the probes. Further, a detector for measuring the current between the probes to determine the presence of the current is provide. The probes are brought into contact with the contact plug of a semiconductor device, a deposition gas is introduced into the device, the contact position of the probes is irradiated with a focused ion beam to bond the probes to the contact plug to form a current introducing terminal. The current introducing mechanism brought into contact with the current introducing terminal to apply voltage to the current introducing terminal from outside of the electron microscope is provided to the sample holder of the electron microscope. COPYRIGHT: (C)2007,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070823&DB=EPODOC&CC=JP&NR=2007212202A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070823&DB=EPODOC&CC=JP&NR=2007212202A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKAGUCHI MASANARI</creatorcontrib><creatorcontrib>TOKIDA RURIKO</creatorcontrib><title>SAMPLE EVALUATION DEVICE AND METHOD</title><description>PROBLEM TO BE SOLVED: To evaluate the device sample formed into a thin film in a transmission electron microscope by applying voltage to the device sample to turn the device sample ready to operate. SOLUTION: A plurality of probes are provided in a focused ion beam device and voltage is freely applied across the probes. Further, a detector for measuring the current between the probes to determine the presence of the current is provide. The probes are brought into contact with the contact plug of a semiconductor device, a deposition gas is introduced into the device, the contact position of the probes is irradiated with a focused ion beam to bond the probes to the contact plug to form a current introducing terminal. The current introducing mechanism brought into contact with the current introducing terminal to apply voltage to the current introducing terminal from outside of the electron microscope is provided to the sample holder of the electron microscope. COPYRIGHT: (C)2007,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAOdvQN8HFVcA1z9Al1DPH091NwcQ3zdHZVcPRzUfB1DfHwd-FhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBuZGhkZGBkaOxkQpAgCLSiLg</recordid><startdate>20070823</startdate><enddate>20070823</enddate><creator>TAKAGUCHI MASANARI</creator><creator>TOKIDA RURIKO</creator><scope>EVB</scope></search><sort><creationdate>20070823</creationdate><title>SAMPLE EVALUATION DEVICE AND METHOD</title><author>TAKAGUCHI MASANARI ; TOKIDA RURIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2007212202A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKAGUCHI MASANARI</creatorcontrib><creatorcontrib>TOKIDA RURIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKAGUCHI MASANARI</au><au>TOKIDA RURIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SAMPLE EVALUATION DEVICE AND METHOD</title><date>2007-08-23</date><risdate>2007</risdate><abstract>PROBLEM TO BE SOLVED: To evaluate the device sample formed into a thin film in a transmission electron microscope by applying voltage to the device sample to turn the device sample ready to operate. SOLUTION: A plurality of probes are provided in a focused ion beam device and voltage is freely applied across the probes. Further, a detector for measuring the current between the probes to determine the presence of the current is provide. The probes are brought into contact with the contact plug of a semiconductor device, a deposition gas is introduced into the device, the contact position of the probes is irradiated with a focused ion beam to bond the probes to the contact plug to form a current introducing terminal. The current introducing mechanism brought into contact with the current introducing terminal to apply voltage to the current introducing terminal from outside of the electron microscope is provided to the sample holder of the electron microscope. COPYRIGHT: (C)2007,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2007212202A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | SAMPLE EVALUATION DEVICE AND METHOD |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T15%3A49%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TAKAGUCHI%20MASANARI&rft.date=2007-08-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2007212202A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |