ION IMPLANTATION MACHINE WITH SUPERCONDUCTIVE MAGNET

PROBLEM TO BE SOLVED: To provide an ion implantation machine which has a mass spectrometry magnet and/or other magnetic structure to be used for supplying ion beams to implant ions into a silicon wafer, and provide its system and method. SOLUTION: The ion implantation machine 10 is composed of an io...

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Bibliographische Detailangaben
Hauptverfasser: POATE JOHN M, RUBIN LEONARD M
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an ion implantation machine which has a mass spectrometry magnet and/or other magnetic structure to be used for supplying ion beams to implant ions into a silicon wafer, and provide its system and method. SOLUTION: The ion implantation machine 10 is composed of an ion source 12 to generate ion beams 14 which moves alongside a beam line and a ion implantation chamber 22. In order to implant ions on the surface of a workpiece 24 by the ion beams, the workpiece is positioned to cross the ion beams. Magnets 30, 40, 42, 44 made of various superconductive materials positioned alongside the beam line are provided to operate the ion beams and ions. The superconductive materials are made of a TCmaterial of a low critical temperature (e.g. NbTi) or a higher TCmaterial (e.g. MgB2, Bi2Sr2CaCu2O8). COPYRIGHT: (C)2007,JPO&INPIT