ETCHING AGENT COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME

PROBLEM TO BE SOLVED: To provide an etching agent composition for fast and uniformly etching a silicon oxide film formed on a silicon substrate and containing carbon and hydrocarbon so as to dissolve and remove the residual film completely, and to provide a method for manufacturing a semiconductor d...

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Bibliographische Detailangaben
Hauptverfasser:	YAGUCHI KAZUYOSHI, OTO HIDE, I CHUNDOUKU, SON BYONU, ABE KOJIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an etching agent composition for fast and uniformly etching a silicon oxide film formed on a silicon substrate and containing carbon and hydrocarbon so as to dissolve and remove the residual film completely, and to provide a method for manufacturing a semiconductor device using the same. SOLUTION: An etching agent is used for fast and uniformly etching a silicon oxide film formed on a silicon substrate, and containing carbon and hydrocarbon so as to dissolve and remove the residual film completely. The etching agent composition is used by adding an interfacial activator to a solution containing a fluorine compound, and the method for manufacturing the semiconductor device uses the same. COPYRIGHT: (C)2007,JPO&INPIT