MASK FOR CHARGED PARTICLE BEAM EXPOSURE, AND PROCESS FOR FABRICATION

PROBLEM TO BE SOLVED: To provide a mask for charged particle exposure along with its process for fabrication capable of forming a square, even if a pattern is micronized while an interval in arrangement of the pattern is not limited. SOLUTION: The mask 1 comprises a circular thin film 5, and the thi...

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Bibliographische Detailangaben
Hauptverfasser:	YUSA SATOSHI, ARITSUKA YUKI, TAKIGAWA TADAHIKO, ISHIKAWA MIKIO
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a mask for charged particle exposure along with its process for fabrication capable of forming a square, even if a pattern is micronized while an interval in arrangement of the pattern is not limited. SOLUTION: The mask 1 comprises a circular thin film 5, and the thin film 5 is provided with a square opening 9. The orientations 21 and 23 of sides 17 and 19 of the opening 9 are parallel to a specific crystal orientation of the material constituting the film 5. If the material is, for example, single crystal silicon, diamond, or those added with boron or phosphor, the crystal orientation contained in the mask plane, or the specific crystal orientation, corresponds to or in mirror index representation. By providing the opening 9, a square shape is formed even the pattern is micronized. COPYRIGHT: (C)2007,JPO&INPIT