LATERAL POWER MOSFET, AND METHOD FOR MANUFACTURING SAME

PROBLEM TO BE SOLVED: To provide a lateral power MOSFET utilizing a side wall of trench as a channel, and also to provide a method for manufacturing the same not allowing reduction in voltage resistance of element. SOLUTION: The lateral power MOSFET includes a p-base region 3 and a first n-offset region 4 formed on a front surface layer of an n-well region 2, a selective oxide film 5 formed on the surface of silicon substrate 1, a trench 7 formed deeper than the p-base region 3 and the first n-offset region 4 in contact with the side surface of the p-base region 3 and the side surface of the first n offset region 4, a second n-offset region 8 formed at the bottom of the trench 7, a gate oxide film 9 formed to the side wall of the trench 7, a gate electrode 10 formed via the gate oxide film 9, a field plate 11 embedding the trench 7 and extending on the selective oxide film 5, and an n-source region 12 and an n-drain region 13 formed on the surface layer. The selective oxide film 11 is formed to the shoulder of trench 7, and the field plate 11 is extended thereover. COPYRIGHT: (C)2007,JPO&INPIT