SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can easily manufacture a semiconductor device equipped with a fine low-resistance MIS field effect transistor having desired electrical properties. SOLUTION: In manufacturing the semiconductor device wherein the fine low-resistance MIS field effect transistor is formed on a silicon substrate, an amorphous carbon layer is formed as a sacrifice layer on a polysilicon substrate whereon a high-resistance MIS field effect transistor having a polysilicon gate electrode, a source region, and a drain region is formed. With the amorphous carbon layer left over, the polysilicon gate electrode is metal-silicidized with a first high-melting point metal. Then, the amorphous carbon layer is removed and the source region and the drain region are metal-silicidized with a second high-melting point metal to form a low-resistance source region metal-silicidized from the top face to a predetermined depth and a low-resistance drain region metal-silicidized from the top face to a predetermined depth. COPYRIGHT: (C)2007,JPO&INPIT