METHOD FOR PULLING SILICON SINGLE CRYSTAL

PROBLEM TO BE SOLVED: To provide a method for pulling a silicon single crystal, which includes a melting process for a silicon melt, by which a homogeneous silicon melt can be stably and surely formed without causing deformation or deterioration of a crucible. SOLUTION: When melting of polycrystalli...

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Bibliographische Detailangaben
Hauptverfasser:	KURAMOCHI KAORU, MAZAKI HIROYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a method for pulling a silicon single crystal, which includes a melting process for a silicon melt, by which a homogeneous silicon melt can be stably and surely formed without causing deformation or deterioration of a crucible. SOLUTION: When melting of polycrystalline silicon 7a by a side-face heater 16 is started, a horizontal magnetic field is applied in a quartz crucible 12 (melting time magnetic field apply process) by operating a magnetic field generation device 32. The magnetic field may be applied in the quartz crucible 12 by the magnetic field generation device 32 when the melting process is started or after several hours. COPYRIGHT: (C)2007,JPO&INPIT