MANUFACTURING METHOD OF SULFIDE SEMICONDUCTOR

PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor safely and easily at a low cost. SOLUTION: The semiconductor manufacturing method includes processes of subjecting a solution that contains organic metals and thiourea to an ultrasonic treatment, applying the solutio...

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1. Verfasser: SUGIYAMA HIDEO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor safely and easily at a low cost. SOLUTION: The semiconductor manufacturing method includes processes of subjecting a solution that contains organic metals and thiourea to an ultrasonic treatment, applying the solution subjected to the ultrasonic treatment on a substrate by a spray, and heating the substrate on which the solution has been applied. In one of the preferable embodiment of the semiconductor manufacturing method; the organic metal is, at least, an element selected from an element group consisting of copper acetate, copper formate, and cupric formate. COPYRIGHT: (C)2007,JPO&INPIT