PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

PROBLEM TO BE SOLVED: To provide a plasma processing device which performs uniform CVD process. SOLUTION: A surface of an electrode plate 20 which is opposite to a susceptor 10 has a protruded shape. The electrode plate 20 is fitted in an opening 26a of a shield ring 26 at a protruded part 20a. At t...

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Bibliographische Detailangaben
Hauptverfasser:	ABE SHOICHI, INOUE YOICHI, ISHIZUKA SHUICHI, ASHIGAKI SHIGEO, YOSHITAKA HIKARI, TAKATSUKI KOICHI, AKAHORI TAKASHI, KAWAMURA GOHEI, OSHIMA YASUHIRO, MIYOSHI SHUSUKE, SUZUKI TAKASHI, TEI MOTOICHI, TAKAHASHI HIROYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma processing device which performs uniform CVD process. SOLUTION: A surface of an electrode plate 20 which is opposite to a susceptor 10 has a protruded shape. The electrode plate 20 is fitted in an opening 26a of a shield ring 26 at a protruded part 20a. At this time, the thickness of the protruded part 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the protruded part 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC. COPYRIGHT: (C)2007,JPO&INPIT