LIGHT EMITTING DIODE AND ITS MANUFACTURING METHOD, INTEGRATED LIGHT EMITTING DIODE AND ITS MANUFACTURING METHOD, LIGHT EMITTING DIODE BACKLIGHT, LIGHT EMITTING DIODE LIGHTING APPARATUS, LIGHT EMITTING DIODE DISPLAY, ELECTRONIC EQUIPMENT, AND ELECTRONIC DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a high-performance, long-life, and highly reliable light emitting diode capable of substantially completely preventing migration of silver, and of yielding a stable high performance electrode excellent in environment resistance when forming an electrode that takes silver as a chief component, and also to provide its manufacturing method. SOLUTION: On a substrate 1 transparent to light of emitted light wavelengths, there are successively grown an n-type nitride-based group III-V compound semiconductor layer 2, an active layer 3, and a p-type nitride-based group III-V compound semiconductor layer 4. A first metal film 6 that takes Ag as a chief component is formed on the p-type nitride-based group III-V compound semiconductor layer 4, and a second metal film 7 that takes Pd and/or Pt so as to cover the first metal film 6 to form a p side electrode 8. COPYRIGHT: (C)2007,JPO&INPIT