TUNGSTEN COMPOUND AND MOLYBDENUM COMPOUND AND USE THEREOF FOR CVD (CHEMICAL VAPOR DEPOSITION)

PROBLEM TO BE SOLVED: To provide a further new precursor, especially the precursor of a WN (tungsten nitride) layer having no conventional disadvantage or bringing about a marked improvement over at least the well-known precursor. SOLUTION: A compound is represented by general formula (I) [wherein,...

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Hauptverfasser:	SUNDERMEYER JORG, ALEXEI MERKOULOV, VOLZ KERSTIN, OCHS THOMAS, POKOJ MICHAEL, REUTER KNUD, STOLZ WOLFGANG
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC OR CARBOCYCLIC COMPOUNDS ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a further new precursor, especially the precursor of a WN (tungsten nitride) layer having no conventional disadvantage or bringing about a marked improvement over at least the well-known precursor. SOLUTION: A compound is represented by general formula (I) [wherein, M, R1, R2, R3, R4, R5and R6have each a specific meaning]. COPYRIGHT: (C)2007,JPO&INPIT