PROCESS EVALUATION DEVICE, SEMICONDUCTOR DEVICE THEREWITH, AND EVALUATION METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS USING SAME
PROBLEM TO BE SOLVED: To provide a process evaluation device equipped with evaluation patterns for evaluating correctly the electric stress derived from the potential difference in the wafer surface generated in the process of manufacturing a semiconductor device. SOLUTION: The process evaluation de...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a process evaluation device equipped with evaluation patterns for evaluating correctly the electric stress derived from the potential difference in the wafer surface generated in the process of manufacturing a semiconductor device. SOLUTION: The process evaluation device formed on a semiconductor substrate comprises: a plurality of two-terminal elements 3a and 3b consisting of wiring layers with inspection regions opposing each other while sandwiching an insulating film; and an antenna pattern 5 consisting of two or more conductive patterns having the same antenna ratio which are formed as top layer wiring in a predetermined region of the semiconductor substrate, so that it may be brought into contact with at least one terminal of the two-terminal elements 3a and 3b, respectively. Accordingly, the electric charge induced on the antenna pattern can be detected by the breakdown caused by the voltage rise between the two-terminal element 3a and 3b. COPYRIGHT: (C)2007,JPO&INPIT |
---|