SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a semiconductor device in which voids generated inside a trench are suppressed and will not be exposed to a trench front part. SOLUTION: In the semiconductor device, on an n+ type semiconductor substrate 3 (for instance, a silicon substrate) functioning as a drain layer, an n-type first semiconductor layer 4, whose main surface is ä100} is disposed by using an epitaxial growth method. A trench, for which the plane direction of the upper stage side face 6a is ä111} and the plane direction of the lower stage side face 6b is ä110} is cyclically formed, by anisotropically etching in the plane direction of the first semiconductor layer 4. Furthermore, inside the trench 6, a p-type second semiconductor layer 5 is embedded by the epitaxial growth method. COPYRIGHT: (C)2007,JPO&INPIT