SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To obtain a semiconductor device having a body potential control function which can achieve high speed operation and suppression of standby power through relatively simple circuitry. SOLUTION: In a circuit 1 for controlling the body potential of a PMOS transistor Q21 and an NMO...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To obtain a semiconductor device having a body potential control function which can achieve high speed operation and suppression of standby power through relatively simple circuitry. SOLUTION: In a circuit 1 for controlling the body potential of a PMOS transistor Q21 and an NMOS transistor Q22 in a control object logical circuit 6, a PMOS transistor Q1 has a source electrode connected with a power supply VDD, a drain electrode or a node N1 connected with the body terminal of the PMOS transistor Q21, and a gate electrode receiving an inversion standby signal bar STB; and an NMOS transistor Q2 has a grounded source electrode, a drain electrode or a node N2 connected with the body terminal of the NMOS transistor Q22, and a gate electrode receiving a standby signal STB. Between the nodes N1 and N2, a transfer gate TF1 is inserted receiving the inversion standby signal bar STB and the standby signal STB at the MOS gate and the PMOS gate. COPYRIGHT: (C)2007,JPO&INPIT |
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