SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To obtain a semiconductor device having a body potential control function which can achieve high speed operation and suppression of standby power through relatively simple circuitry. SOLUTION: In a circuit 1 for controlling the body potential of a PMOS transistor Q21 and an NMO...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KITAMURA MASAYUKI, NUMA MASAHIRO, NOTANI HIROMI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To obtain a semiconductor device having a body potential control function which can achieve high speed operation and suppression of standby power through relatively simple circuitry. SOLUTION: In a circuit 1 for controlling the body potential of a PMOS transistor Q21 and an NMOS transistor Q22 in a control object logical circuit 6, a PMOS transistor Q1 has a source electrode connected with a power supply VDD, a drain electrode or a node N1 connected with the body terminal of the PMOS transistor Q21, and a gate electrode receiving an inversion standby signal bar STB; and an NMOS transistor Q2 has a grounded source electrode, a drain electrode or a node N2 connected with the body terminal of the NMOS transistor Q22, and a gate electrode receiving a standby signal STB. Between the nodes N1 and N2, a transfer gate TF1 is inserted receiving the inversion standby signal bar STB and the standby signal STB at the MOS gate and the PMOS gate. COPYRIGHT: (C)2007,JPO&INPIT