METHOD OF FORMING PrxCa1-xMnO3 THIN FILM HAVING PrMnO3/CaMnO3 SUPERLATTICE STRUCTURE BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION
PROBLEM TO BE SOLVED: To provide a method of forming a PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD. SOLUTION: The method of forming the PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD comprises a step of preparing an organometallic compound and a sol...
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| creator | LI TINGKAI LAWRENCE J CHARNESKI HSU SHENG TENG |
| description | PROBLEM TO BE SOLVED: To provide a method of forming a PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD. SOLUTION: The method of forming the PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD comprises a step of preparing an organometallic compound and a solvent, and a step of mixing the organometallic compound and the solvent to form a PMO precursor and a CMO precursor. The PMO precursor and the CMO precursor are injected into the vaporizer of a MOCVD reaction chamber. The PMO precursor and the CMO precursor are alternately injected into the vaporizer of the MOCVD reaction chamber, so that a deposition parameter is selected to form a nano-size PCMO thin film or a PCMO thin film made of a crystalline substance. The selected deposition parameter is kept to deposit a PCMO thin-film seed having a desired concentration ratio between Pr and Ca on a specific portion of the PCMO thin film. The obtained PCMO thin film is annealed at a selected temperature for a selected time period. COPYRIGHT: (C)2007,JPO&INPIT |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2007158318A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2007158318A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2007158318A3</originalsourceid><addsrcrecordid>eNqNjL0KwjAURrs4iPoOF_diaxG7xtukiSRNSNOCUwkSJ6nFOrj56v4-gNOB73ycafRQ1HFdgGbAtFWiKsFc7-jT-K56nYHjogImpAJO2q997yv0H103hlpJnBNIoXa2QddYCrsDvLpExtqWpBIIyKkSSCS0xGgLBTW6Fk7oah5NTv48hsWPs2jJqEMeh-HShXHwx9CHW7c36yTZpps8S3OS_XV6AmTQPYA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF FORMING PrxCa1-xMnO3 THIN FILM HAVING PrMnO3/CaMnO3 SUPERLATTICE STRUCTURE BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION</title><source>esp@cenet</source><creator>LI TINGKAI ; LAWRENCE J CHARNESKI ; HSU SHENG TENG</creator><creatorcontrib>LI TINGKAI ; LAWRENCE J CHARNESKI ; HSU SHENG TENG</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method of forming a PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD. SOLUTION: The method of forming the PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD comprises a step of preparing an organometallic compound and a solvent, and a step of mixing the organometallic compound and the solvent to form a PMO precursor and a CMO precursor. The PMO precursor and the CMO precursor are injected into the vaporizer of a MOCVD reaction chamber. The PMO precursor and the CMO precursor are alternately injected into the vaporizer of the MOCVD reaction chamber, so that a deposition parameter is selected to form a nano-size PCMO thin film or a PCMO thin film made of a crystalline substance. The selected deposition parameter is kept to deposit a PCMO thin-film seed having a desired concentration ratio between Pr and Ca on a specific portion of the PCMO thin film. The obtained PCMO thin film is annealed at a selected temperature for a selected time period. COPYRIGHT: (C)2007,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070621&DB=EPODOC&CC=JP&NR=2007158318A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070621&DB=EPODOC&CC=JP&NR=2007158318A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI TINGKAI</creatorcontrib><creatorcontrib>LAWRENCE J CHARNESKI</creatorcontrib><creatorcontrib>HSU SHENG TENG</creatorcontrib><title>METHOD OF FORMING PrxCa1-xMnO3 THIN FILM HAVING PrMnO3/CaMnO3 SUPERLATTICE STRUCTURE BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION</title><description>PROBLEM TO BE SOLVED: To provide a method of forming a PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD. SOLUTION: The method of forming the PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD comprises a step of preparing an organometallic compound and a solvent, and a step of mixing the organometallic compound and the solvent to form a PMO precursor and a CMO precursor. The PMO precursor and the CMO precursor are injected into the vaporizer of a MOCVD reaction chamber. The PMO precursor and the CMO precursor are alternately injected into the vaporizer of the MOCVD reaction chamber, so that a deposition parameter is selected to form a nano-size PCMO thin film or a PCMO thin film made of a crystalline substance. The selected deposition parameter is kept to deposit a PCMO thin-film seed having a desired concentration ratio between Pr and Ca on a specific portion of the PCMO thin film. The obtained PCMO thin film is annealed at a selected temperature for a selected time period. COPYRIGHT: (C)2007,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjL0KwjAURrs4iPoOF_diaxG7xtukiSRNSNOCUwkSJ6nFOrj56v4-gNOB73ycafRQ1HFdgGbAtFWiKsFc7-jT-K56nYHjogImpAJO2q997yv0H103hlpJnBNIoXa2QddYCrsDvLpExtqWpBIIyKkSSCS0xGgLBTW6Fk7oah5NTv48hsWPs2jJqEMeh-HShXHwx9CHW7c36yTZpps8S3OS_XV6AmTQPYA</recordid><startdate>20070621</startdate><enddate>20070621</enddate><creator>LI TINGKAI</creator><creator>LAWRENCE J CHARNESKI</creator><creator>HSU SHENG TENG</creator><scope>EVB</scope></search><sort><creationdate>20070621</creationdate><title>METHOD OF FORMING PrxCa1-xMnO3 THIN FILM HAVING PrMnO3/CaMnO3 SUPERLATTICE STRUCTURE BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION</title><author>LI TINGKAI ; LAWRENCE J CHARNESKI ; HSU SHENG TENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2007158318A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LI TINGKAI</creatorcontrib><creatorcontrib>LAWRENCE J CHARNESKI</creatorcontrib><creatorcontrib>HSU SHENG TENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LI TINGKAI</au><au>LAWRENCE J CHARNESKI</au><au>HSU SHENG TENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF FORMING PrxCa1-xMnO3 THIN FILM HAVING PrMnO3/CaMnO3 SUPERLATTICE STRUCTURE BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION</title><date>2007-06-21</date><risdate>2007</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method of forming a PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD. SOLUTION: The method of forming the PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD comprises a step of preparing an organometallic compound and a solvent, and a step of mixing the organometallic compound and the solvent to form a PMO precursor and a CMO precursor. The PMO precursor and the CMO precursor are injected into the vaporizer of a MOCVD reaction chamber. The PMO precursor and the CMO precursor are alternately injected into the vaporizer of the MOCVD reaction chamber, so that a deposition parameter is selected to form a nano-size PCMO thin film or a PCMO thin film made of a crystalline substance. The selected deposition parameter is kept to deposit a PCMO thin-film seed having a desired concentration ratio between Pr and Ca on a specific portion of the PCMO thin film. The obtained PCMO thin film is annealed at a selected temperature for a selected time period. COPYRIGHT: (C)2007,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD OF FORMING PrxCa1-xMnO3 THIN FILM HAVING PrMnO3/CaMnO3 SUPERLATTICE STRUCTURE BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION |
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