METHOD OF FORMING PrxCa1-xMnO3 THIN FILM HAVING PrMnO3/CaMnO3 SUPERLATTICE STRUCTURE BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION

PROBLEM TO BE SOLVED: To provide a method of forming a PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD. SOLUTION: The method of forming the PrxCa1-xMnO3thin film having a PMO/CMO superlattice structure by MOCVD comprises a step of preparing an organometallic compound and a solvent, and a step of mixing the organometallic compound and the solvent to form a PMO precursor and a CMO precursor. The PMO precursor and the CMO precursor are injected into the vaporizer of a MOCVD reaction chamber. The PMO precursor and the CMO precursor are alternately injected into the vaporizer of the MOCVD reaction chamber, so that a deposition parameter is selected to form a nano-size PCMO thin film or a PCMO thin film made of a crystalline substance. The selected deposition parameter is kept to deposit a PCMO thin-film seed having a desired concentration ratio between Pr and Ca on a specific portion of the PCMO thin film. The obtained PCMO thin film is annealed at a selected temperature for a selected time period. COPYRIGHT: (C)2007,JPO&INPIT