METHOD OF FORMING SEMICONDUCTOR DEVICE USING EMBEDDED L-SHAPED SPACER, AND SEMICONDUCTOR DEVICE THEREOF

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which an L-shaped spacer is embedded. SOLUTION: The method includes a step of defining an L-shaped spacer on each side of a gate region of a substrate; and a step of embedding the L-shaped spacer in an oxide layer s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ATUL C AJMERA, LUO ZHIJIONG, TEH YOUNG WAY
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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