METHOD OF FORMING SEMICONDUCTOR DEVICE USING EMBEDDED L-SHAPED SPACER, AND SEMICONDUCTOR DEVICE THEREOF

METHOD OF FORMING SEMICONDUCTOR DEVICE USING EMBEDDED L-SHAPED SPACER, AND SEMICONDUCTOR DEVICE THEREOF

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which an L-shaped spacer is embedded. SOLUTION: The method includes a step of defining an L-shaped spacer on each side of a gate region of a substrate; and a step of embedding the L-shaped spacer in an oxide layer s...

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Bibliographische Detailangaben
Hauptverfasser: ATUL C AJMERA, LUO ZHIJIONG, TEH YOUNG WAY
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which an L-shaped spacer is embedded. SOLUTION: The method includes a step of defining an L-shaped spacer on each side of a gate region of a substrate; and a step of embedding the L-shaped spacer in an oxide layer so that the oxide layer covers a portion of the substrate to a predetermined distance from a side edge of the L-shaped spacer. Further, an oxide layer is removed to expose the L-shaped spacer. COPYRIGHT: (C)2007,JPO&INPIT