METHOD OF FORMING SEMICONDUCTOR DEVICE USING EMBEDDED L-SHAPED SPACER, AND SEMICONDUCTOR DEVICE THEREOF
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which an L-shaped spacer is embedded. SOLUTION: The method includes a step of defining an L-shaped spacer on each side of a gate region of a substrate; and a step of embedding the L-shaped spacer in an oxide layer s...
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| creator | ATUL C AJMERA LUO ZHIJIONG TEH YOUNG WAY |
| description | PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which an L-shaped spacer is embedded. SOLUTION: The method includes a step of defining an L-shaped spacer on each side of a gate region of a substrate; and a step of embedding the L-shaped spacer in an oxide layer so that the oxide layer covers a portion of the substrate to a predetermined distance from a side edge of the L-shaped spacer. Further, an oxide layer is removed to expose the L-shaped spacer. COPYRIGHT: (C)2007,JPO&INPIT |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD OF FORMING SEMICONDUCTOR DEVICE USING EMBEDDED L-SHAPED SPACER, AND SEMICONDUCTOR DEVICE THEREOF |
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