FIELD EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING SAME

PROBLEM TO BE SOLVED: To reduce leakage currents between a source/drain and a gate, and well of a semiconductor device. SOLUTION: The field effect transistor 2 has a first and a second source/drain region 28 arranged on either side face of a gate electrode 4 with a channel region 26 formed in the in...

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Hauptverfasser:	SCHLOSSER TILL, MANGER DIRK
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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