FIELD EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING SAME

PROBLEM TO BE SOLVED: To reduce leakage currents between a source/drain and a gate, and well of a semiconductor device. SOLUTION: The field effect transistor 2 has a first and a second source/drain region 28 arranged on either side face of a gate electrode 4 with a channel region 26 formed in the interior of a semiconductor substrate 24 in a position interposed between the first and second source/drain regions 28 directly under the gate electrode 4. A gate oxide layer 22 is formed on the substrate. The gate electrode 4 contacts a surface of the gate oxide layer 22 and has at least a first conductor layer 10 and a second conductor layer 12. The first conductor layer 10 and the second conductor layer 12 are composed of materials having work functions different from each other. The first conductor layer 10 of the gate electrode 4 contacts the surface of the gate oxide layer 22 in a first portion 40, and the second conductor layer 12 contacts the surface of the gate oxide layer in a second portion 42. The first conductor layer 10 is further conductively connected to the second conductor layer 12. COPYRIGHT: (C)2007,JPO&INPIT