METHOD FOR RAPID THERMAL PROCESSING (RTP) OF SILICON SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method of processing a semiconductor substrate so that it may be possible to fulfill acceptability about dopant quantity and dopant position, a method of processing the semiconductor substrate so that an extremely thin oxide film with excellent characteristics and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LERCH WILFRIED, SOMMER HELMUT, NENYEI ZSOLT
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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