METHOD FOR RAPID THERMAL PROCESSING (RTP) OF SILICON SUBSTRATE

METHOD FOR RAPID THERMAL PROCESSING (RTP) OF SILICON SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method of processing a semiconductor substrate so that it may be possible to fulfill acceptability about dopant quantity and dopant position, a method of processing the semiconductor substrate so that an extremely thin oxide film with excellent characteristics and...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LERCH WILFRIED, SOMMER HELMUT, NENYEI ZSOLT
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method of processing a semiconductor substrate so that it may be possible to fulfill acceptability about dopant quantity and dopant position, a method of processing the semiconductor substrate so that an extremely thin oxide film with excellent characteristics and excellent uniformity can be manufactured, and a method of processing the semiconductor substrate so that etching of a reactant of silicon and silicon oxide can be controlled carefully. SOLUTION: In the method of rapid thermal processing (RTP) of a silicon substrate, a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface. COPYRIGHT: (C)2007,JPO&INPIT