SUBSTRATE PROCESSING METHOD AND RINSE DEVICE

PROBLEM TO BE SOLVED: To improve a manufacturing yield of a resist pattern by removing unintended level difference of a substrate bevel and a resist film or a protective film of the substrate bevel which causes a source of dust, while securing the tracking ability of an immersion liquid. SOLUTION: A...

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Bibliographische Detailangaben
Hauptverfasser: TAKEISHI TOMOYUKI, ONISHI KIYONOBU, SHIOBARA HIDESHI, HAYAZAKI KEI, KAWAMURA DAISUKE, ITO SHINICHI, TOUKI TATSUHIKO
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To improve a manufacturing yield of a resist pattern by removing unintended level difference of a substrate bevel and a resist film or a protective film of the substrate bevel which causes a source of dust, while securing the tracking ability of an immersion liquid. SOLUTION: A resist pattern is formed on a substrate to be processed by using liquid immersion exposure. As for a substrate to be processed 10, a resist film 23 is formed in an end 13 and a bevel 14 by the side of the substrate surface where chamfering machining has been carried out in the circumference and the central part of a substrate surface side 11. Thereafter, in a state where a liquid with a larger refractive index than air exists between the resist film 23 and the constituent closest to the side of the substrate of a projection optical system of the exposure device; an exposure process for forming a latent image of a desired pattern in the resist film 23 is performed, the resist film 23 is developed in which a latent image has been formed, a rinse agent 34 is supplied at the end 13 of the substrate 10 after the exposure process, and thus the resist film 23 is removed at of the end 13 of the substrate 10. COPYRIGHT: (C)2007,JPO&INPIT