SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device and method of manufacturing the same wherein an insulating layer for isolating elements from each other can be easily formed, interconnections can be protected against step disconnection, and furthermore interconnects can be reduced in parasiti...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: KAIDO JUNJI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator KAIDO JUNJI
description PROBLEM TO BE SOLVED: To provide a semiconductor device and method of manufacturing the same wherein an insulating layer for isolating elements from each other can be easily formed, interconnections can be protected against step disconnection, and furthermore interconnects can be reduced in parasitic capacitance. SOLUTION: A groove 17 for isolating elements from each other is formed in an SiC substrate (or SiC thin film), and the groove 17 is filled up with an insulating film, such as an oxide film (SiO2) 18 etc. The insulating film can be formed by deposition, so that the insulating film as thick as 1 μm or above can be easily obtained, and an element isolation process can be carried out well through a simple method. Interconnections are provided on the insulating film filling the groove 17, whereby the interconnections can be protected against disconnection and reduced in parasitic capacitance. COPYRIGHT: (C)2007,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2007142125A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2007142125A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2007142125A3</originalsourceid><addsrcrecordid>eNrjZDANdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UfB3U_B19At1c3QOCQ3y9HNXCHb0deVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBuaGJkaGRqaOxkQpAgAzQyfy</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME</title><source>esp@cenet</source><creator>KAIDO JUNJI</creator><creatorcontrib>KAIDO JUNJI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a semiconductor device and method of manufacturing the same wherein an insulating layer for isolating elements from each other can be easily formed, interconnections can be protected against step disconnection, and furthermore interconnects can be reduced in parasitic capacitance. SOLUTION: A groove 17 for isolating elements from each other is formed in an SiC substrate (or SiC thin film), and the groove 17 is filled up with an insulating film, such as an oxide film (SiO2) 18 etc. The insulating film can be formed by deposition, so that the insulating film as thick as 1 μm or above can be easily obtained, and an element isolation process can be carried out well through a simple method. Interconnections are provided on the insulating film filling the groove 17, whereby the interconnections can be protected against disconnection and reduced in parasitic capacitance. COPYRIGHT: (C)2007,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20070607&amp;DB=EPODOC&amp;CC=JP&amp;NR=2007142125A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20070607&amp;DB=EPODOC&amp;CC=JP&amp;NR=2007142125A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAIDO JUNJI</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor device and method of manufacturing the same wherein an insulating layer for isolating elements from each other can be easily formed, interconnections can be protected against step disconnection, and furthermore interconnects can be reduced in parasitic capacitance. SOLUTION: A groove 17 for isolating elements from each other is formed in an SiC substrate (or SiC thin film), and the groove 17 is filled up with an insulating film, such as an oxide film (SiO2) 18 etc. The insulating film can be formed by deposition, so that the insulating film as thick as 1 μm or above can be easily obtained, and an element isolation process can be carried out well through a simple method. Interconnections are provided on the insulating film filling the groove 17, whereby the interconnections can be protected against disconnection and reduced in parasitic capacitance. COPYRIGHT: (C)2007,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UfB3U_B19At1c3QOCQ3y9HNXCHb0deVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBuaGJkaGRqaOxkQpAgAzQyfy</recordid><startdate>20070607</startdate><enddate>20070607</enddate><creator>KAIDO JUNJI</creator><scope>EVB</scope></search><sort><creationdate>20070607</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME</title><author>KAIDO JUNJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2007142125A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAIDO JUNJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAIDO JUNJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME</title><date>2007-06-07</date><risdate>2007</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor device and method of manufacturing the same wherein an insulating layer for isolating elements from each other can be easily formed, interconnections can be protected against step disconnection, and furthermore interconnects can be reduced in parasitic capacitance. SOLUTION: A groove 17 for isolating elements from each other is formed in an SiC substrate (or SiC thin film), and the groove 17 is filled up with an insulating film, such as an oxide film (SiO2) 18 etc. The insulating film can be formed by deposition, so that the insulating film as thick as 1 μm or above can be easily obtained, and an element isolation process can be carried out well through a simple method. Interconnections are provided on the insulating film filling the groove 17, whereby the interconnections can be protected against disconnection and reduced in parasitic capacitance. COPYRIGHT: (C)2007,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2007142125A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T14%3A29%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KAIDO%20JUNJI&rft.date=2007-06-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2007142125A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true