SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device and method of manufacturing the same wherein an insulating layer for isolating elements from each other can be easily formed, interconnections can be protected against step disconnection, and furthermore interconnects can be reduced in parasitic capacitance. SOLUTION: A groove 17 for isolating elements from each other is formed in an SiC substrate (or SiC thin film), and the groove 17 is filled up with an insulating film, such as an oxide film (SiO2) 18 etc. The insulating film can be formed by deposition, so that the insulating film as thick as 1 μm or above can be easily obtained, and an element isolation process can be carried out well through a simple method. Interconnections are provided on the insulating film filling the groove 17, whereby the interconnections can be protected against disconnection and reduced in parasitic capacitance. COPYRIGHT: (C)2007,JPO&INPIT