ANISOTROPIC ETCHING METHOD FOR SILICON

PROBLEM TO BE SOLVED: To provide an anisotropic etching method by plasma on a silicon substrate, using an etching mask that makes it possible to obtain a notch part, defined correctly on a side surface. SOLUTION: A silicon substrate 18 is arranged on a substrate electrode 12 in the working range of...

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Bibliographische Detailangaben
Hauptverfasser:	SCHILP ANDREA, LAERMER FRANZ
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an anisotropic etching method by plasma on a silicon substrate, using an etching mask that makes it possible to obtain a notch part, defined correctly on a side surface. SOLUTION: A silicon substrate 18 is arranged on a substrate electrode 12 in the working range of a sulfatron 16, connected to a resonator 20 for microwave plasma excitation inside an etching chamber 10, where the substrate electrode 12 connected to a high-frequency generator 14 is arranged. Furthermore, a polymerization process and an etching process which continue alternately are implemented, by using the microwave plasma apparatus with a waveguide 22 for drawing reactive gas. COPYRIGHT: (C)2007,JPO&INPIT