CHARGING CONTROL DEVICE AND CHARGED PARTICLE BEAM APPLICATION APPARATUS HAVING SAME

PROBLEM TO BE SOLVED: To detect poor openings of high aspect contact holes formed on a wafer rapidly and highly precisely in a mirror electron projection system. SOLUTION: An opening hole bottom of a sample substrate is irradiated with an ultraviolet ray having the wavelength allowing the opening hole bottom to emit photoelectrons to charge only a side wall of the opening hole, and thus different equipotential surfaces are produced right above the opening holes and non-opening holes. If this distortion is inspected by a mirror electron projection type inspection apparatus, the opening holes and the non-opening holes are distinguished from each other, so that poor openings defect of holes having the high aspect ratio are detected. COPYRIGHT: (C)2007,JPO&INPIT