METHOD FOR FORMING DEPOSITION FILM

PROBLEM TO BE SOLVED: To provide a method for forming a deposition film, which reduces a production cost without sacrificing electrical characteristics and can stably produce the film in a high yield. SOLUTION: An apparatus for forming the deposition film has a plurality of cylindrical substrates 10...

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Bibliographische Detailangaben
Hauptverfasser: HASHIZUME JUNICHIRO, OKAMURA TATSUJI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for forming a deposition film, which reduces a production cost without sacrificing electrical characteristics and can stably produce the film in a high yield. SOLUTION: An apparatus for forming the deposition film has a plurality of cylindrical substrates 107 arranged on the same circumference in a reaction vessel 100 and a discharge electrode 101 installed so as to surround a plurality of the cylindrical substrates 107. The method for forming the deposition film on a plurality of the cylindrical substrates 107 by using the film-forming apparatus and applying a high-frequency power includes setting a deposition rate on the surface of the cylindrical substrate 107 so that a deposition rate on a plane (position A) which faces to the center of a central space 111 surrounded by a plurality of the cylindrical substrates 107 has a ratio of 5% to 30% (both inclusive) with respect to a deposition rate on the plane (position B) which faces to the discharge electrode. COPYRIGHT: (C)2007,JPO&INPIT