VANADIUM OXIDE (III) AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide vanadium oxide (III) having a high specific surface area and a method for industrially and profitably manufacturing the vanadium oxide (III). SOLUTION: The vanadium oxide (III) contains trivalent vanadium atom and has a specific surface area of ≥10 m2/g. The method i...

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Hauptverfasser: TAKAHASHI TSUKASA, MATSUNAMI ETSUSEI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide vanadium oxide (III) having a high specific surface area and a method for industrially and profitably manufacturing the vanadium oxide (III). SOLUTION: The vanadium oxide (III) contains trivalent vanadium atom and has a specific surface area of ≥10 m2/g. The method is for manufacturing the vanadium oxide (III) and has a process in which a tetravalent or pentavalent vanadium compound is reduced in a liquid phase using a reducing gas. COPYRIGHT: (C)2007,JPO&INPIT