PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD

PROBLEM TO BE SOLVED: To improve the cooling efficiency of a substrate by holding the substrate with high adhesiveness to a substrate susceptor in a plasma treatment apparatus, and to uniformize treatment in the entire region on the surface of the substrate including a portion near the periphery edg...

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Hauptverfasser: HOUCHIN RIYUUZOU, WATANABE AKIZO, OKITA SHOGO, SUZUKI HIROYUKI, ASAKURA HIROMI
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creator HOUCHIN RIYUUZOU
WATANABE AKIZO
OKITA SHOGO
SUZUKI HIROYUKI
ASAKURA HIROMI
description PROBLEM TO BE SOLVED: To improve the cooling efficiency of a substrate by holding the substrate with high adhesiveness to a substrate susceptor in a plasma treatment apparatus, and to uniformize treatment in the entire region on the surface of the substrate including a portion near the periphery edge. SOLUTION: A tray 15 of a dry etching device 1 has substrate housing holes 19A-19D passing through in a thickness direction, and a substrate support 21 for supporting the periphery edge of the lower surface 2a of the substrate 2. A dielectric plate 23 has a tray support surface 28 for supporting the lower surface of the tray 15; and substrate placement parts 29A-29D that are inserted into the substrate housing holes 19A-19D from the lower-surface side of the tray 15, and allow the substrate 2 to be placed on the substrate placement surface 31 of an upper end face. A DC voltage application mechanism 43 applies a DC voltage to an electrode 40 for electrostatic adsorption. A heat transfer gas supply mechanism 45 supplies a heat transfer gas between the substrate 2 and the substrate placement surface 31. COPYRIGHT: (C)2007,JPO&INPIT
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2007109770A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2007109770A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2007109770A3</originalsourceid><addsrcrecordid>eNrjZDAL8HEM9nVUCAlydQzxdfULUXAMCHAMcgwJDVZw9HNRwJD2dQ3x8HfhYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgbmhgaW5uYGjsZEKQIAcYYofA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD</title><source>esp@cenet</source><creator>HOUCHIN RIYUUZOU ; WATANABE AKIZO ; OKITA SHOGO ; SUZUKI HIROYUKI ; ASAKURA HIROMI</creator><creatorcontrib>HOUCHIN RIYUUZOU ; WATANABE AKIZO ; OKITA SHOGO ; SUZUKI HIROYUKI ; ASAKURA HIROMI</creatorcontrib><description>PROBLEM TO BE SOLVED: To improve the cooling efficiency of a substrate by holding the substrate with high adhesiveness to a substrate susceptor in a plasma treatment apparatus, and to uniformize treatment in the entire region on the surface of the substrate including a portion near the periphery edge. SOLUTION: A tray 15 of a dry etching device 1 has substrate housing holes 19A-19D passing through in a thickness direction, and a substrate support 21 for supporting the periphery edge of the lower surface 2a of the substrate 2. A dielectric plate 23 has a tray support surface 28 for supporting the lower surface of the tray 15; and substrate placement parts 29A-29D that are inserted into the substrate housing holes 19A-19D from the lower-surface side of the tray 15, and allow the substrate 2 to be placed on the substrate placement surface 31 of an upper end face. A DC voltage application mechanism 43 applies a DC voltage to an electrode 40 for electrostatic adsorption. A heat transfer gas supply mechanism 45 supplies a heat transfer gas between the substrate 2 and the substrate placement surface 31. COPYRIGHT: (C)2007,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20070426&amp;DB=EPODOC&amp;CC=JP&amp;NR=2007109770A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20070426&amp;DB=EPODOC&amp;CC=JP&amp;NR=2007109770A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HOUCHIN RIYUUZOU</creatorcontrib><creatorcontrib>WATANABE AKIZO</creatorcontrib><creatorcontrib>OKITA SHOGO</creatorcontrib><creatorcontrib>SUZUKI HIROYUKI</creatorcontrib><creatorcontrib>ASAKURA HIROMI</creatorcontrib><title>PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD</title><description>PROBLEM TO BE SOLVED: To improve the cooling efficiency of a substrate by holding the substrate with high adhesiveness to a substrate susceptor in a plasma treatment apparatus, and to uniformize treatment in the entire region on the surface of the substrate including a portion near the periphery edge. SOLUTION: A tray 15 of a dry etching device 1 has substrate housing holes 19A-19D passing through in a thickness direction, and a substrate support 21 for supporting the periphery edge of the lower surface 2a of the substrate 2. A dielectric plate 23 has a tray support surface 28 for supporting the lower surface of the tray 15; and substrate placement parts 29A-29D that are inserted into the substrate housing holes 19A-19D from the lower-surface side of the tray 15, and allow the substrate 2 to be placed on the substrate placement surface 31 of an upper end face. A DC voltage application mechanism 43 applies a DC voltage to an electrode 40 for electrostatic adsorption. A heat transfer gas supply mechanism 45 supplies a heat transfer gas between the substrate 2 and the substrate placement surface 31. COPYRIGHT: (C)2007,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAL8HEM9nVUCAlydQzxdfULUXAMCHAMcgwJDVZw9HNRwJD2dQ3x8HfhYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgbmhgaW5uYGjsZEKQIAcYYofA</recordid><startdate>20070426</startdate><enddate>20070426</enddate><creator>HOUCHIN RIYUUZOU</creator><creator>WATANABE AKIZO</creator><creator>OKITA SHOGO</creator><creator>SUZUKI HIROYUKI</creator><creator>ASAKURA HIROMI</creator><scope>EVB</scope></search><sort><creationdate>20070426</creationdate><title>PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD</title><author>HOUCHIN RIYUUZOU ; WATANABE AKIZO ; OKITA SHOGO ; SUZUKI HIROYUKI ; ASAKURA HIROMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2007109770A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HOUCHIN RIYUUZOU</creatorcontrib><creatorcontrib>WATANABE AKIZO</creatorcontrib><creatorcontrib>OKITA SHOGO</creatorcontrib><creatorcontrib>SUZUKI HIROYUKI</creatorcontrib><creatorcontrib>ASAKURA HIROMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HOUCHIN RIYUUZOU</au><au>WATANABE AKIZO</au><au>OKITA SHOGO</au><au>SUZUKI HIROYUKI</au><au>ASAKURA HIROMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD</title><date>2007-04-26</date><risdate>2007</risdate><abstract>PROBLEM TO BE SOLVED: To improve the cooling efficiency of a substrate by holding the substrate with high adhesiveness to a substrate susceptor in a plasma treatment apparatus, and to uniformize treatment in the entire region on the surface of the substrate including a portion near the periphery edge. SOLUTION: A tray 15 of a dry etching device 1 has substrate housing holes 19A-19D passing through in a thickness direction, and a substrate support 21 for supporting the periphery edge of the lower surface 2a of the substrate 2. A dielectric plate 23 has a tray support surface 28 for supporting the lower surface of the tray 15; and substrate placement parts 29A-29D that are inserted into the substrate housing holes 19A-19D from the lower-surface side of the tray 15, and allow the substrate 2 to be placed on the substrate placement surface 31 of an upper end face. A DC voltage application mechanism 43 applies a DC voltage to an electrode 40 for electrostatic adsorption. A heat transfer gas supply mechanism 45 supplies a heat transfer gas between the substrate 2 and the substrate placement surface 31. COPYRIGHT: (C)2007,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD
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