PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD

PROBLEM TO BE SOLVED: To improve the cooling efficiency of a substrate by holding the substrate with high adhesiveness to a substrate susceptor in a plasma treatment apparatus, and to uniformize treatment in the entire region on the surface of the substrate including a portion near the periphery edg...

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Bibliographische Detailangaben
Hauptverfasser: HOUCHIN RIYUUZOU, WATANABE AKIZO, OKITA SHOGO, SUZUKI HIROYUKI, ASAKURA HIROMI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To improve the cooling efficiency of a substrate by holding the substrate with high adhesiveness to a substrate susceptor in a plasma treatment apparatus, and to uniformize treatment in the entire region on the surface of the substrate including a portion near the periphery edge. SOLUTION: A tray 15 of a dry etching device 1 has substrate housing holes 19A-19D passing through in a thickness direction, and a substrate support 21 for supporting the periphery edge of the lower surface 2a of the substrate 2. A dielectric plate 23 has a tray support surface 28 for supporting the lower surface of the tray 15; and substrate placement parts 29A-29D that are inserted into the substrate housing holes 19A-19D from the lower-surface side of the tray 15, and allow the substrate 2 to be placed on the substrate placement surface 31 of an upper end face. A DC voltage application mechanism 43 applies a DC voltage to an electrode 40 for electrostatic adsorption. A heat transfer gas supply mechanism 45 supplies a heat transfer gas between the substrate 2 and the substrate placement surface 31. COPYRIGHT: (C)2007,JPO&INPIT