METHOD FOR FORMING METAL WIRING STRUCTURE
PROBLEM TO BE SOLVED: To form a flat and thin barrier film, or Ru film in a damascene structure. SOLUTION: A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introdu...
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| creator | JINRIKI HIROSHI SHIMIZU AKIRA |
| description | PROBLEM TO BE SOLVED: To form a flat and thin barrier film, or Ru film in a damascene structure. SOLUTION: A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing -NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging the reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas comprising N and H and then purging the reaction space; (vi) repeating the steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer. COPYRIGHT: (C)2007,JPO&INPIT |
| format | Patent |
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SOLUTION: A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing -NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging the reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas comprising N and H and then purging the reaction space; (vi) repeating the steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer. 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SOLUTION: A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing -NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging the reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas comprising N and H and then purging the reaction space; (vi) repeating the steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer. COPYRIGHT: (C)2007,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD FOR FORMING METAL WIRING STRUCTURE |
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