METHOD FOR FORMING METAL WIRING STRUCTURE

PROBLEM TO BE SOLVED: To form a flat and thin barrier film, or Ru film in a damascene structure. SOLUTION: A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing -NH2 or >NH terminal at least on an exposed surface of the insulating layer in a reducing atmosphere; (iii) introducing a reducing compound to the reaction space and then purging the reaction space; (iv) introducing a metal halide compound to the reaction space and then purging the reaction space; (v) introducing a gas comprising N and H and then purging the reaction space; (vi) repeating the steps (iii) to (v) in sequence to produce a metal-containing barrier layer; and (vii) forming a metal film on the metal-containing barrier layer. COPYRIGHT: (C)2007,JPO&INPIT