METHOD FOR OPENING CARBON BASED HARDMASK

METHOD FOR OPENING CARBON BASED HARDMASK

PROBLEM TO BE SOLVED: To provide a method for opening a carbon based hardmask, in the etching of a semiconductor integrated circuit. SOLUTION: A method of opening a carbon-based hardmask layer 18 composed of amorphous carbon containing preferably at least 60% carbon and between 10-40% hydrogen, and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SUNG SHING-LI, WANG JUDY, MA SHAWMING, PU BRYAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for opening a carbon based hardmask, in the etching of a semiconductor integrated circuit. SOLUTION: A method of opening a carbon-based hardmask layer 18 composed of amorphous carbon containing preferably at least 60% carbon and between 10-40% hydrogen, and lying on a dielectric layer 16. The hardmask is opened by plasma etching using an etching gas composed of H, N, and CO. The etching is preferably performed in a plasma etch reactor having an HF biased pedestal electrode and a capacitively VHF biased showerhead. COPYRIGHT: (C)2007,JPO&INPIT