METHOD OF MANUFACTURING PERPENDICULAR STRUCTURE LIGHT EMITTING DIODE
PROBLEM TO BE SOLVED: To provide the method of manufacturing a perpendicular structure light emitting diode in which a chip separation process is easy. SOLUTION: The method of manufacturing a perpendicular structure light emitting diode comprises the steps of forming a light emitting structure 115 i...
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| creator | AHN SE HWAN RYU YUNG-HO SHIM DA MI HWANG HAE YOUN |
| description | PROBLEM TO BE SOLVED: To provide the method of manufacturing a perpendicular structure light emitting diode in which a chip separation process is easy. SOLUTION: The method of manufacturing a perpendicular structure light emitting diode comprises the steps of forming a light emitting structure 115 in which an n-type clad layer 150a, an active layer 115b, and a p-type clad layer 115c are sequentially arranged on a substrate for growth 101 having a plurality of device regions A and at least one device separation region B, forming a p side electrode 106 on the light emitting structure, forming a first plating layer 136 on the p side electrode such that the plurality of device regions are connected, forming the pattern of a second plating layer 156 on the first plating layer of the device region, and removing the substrate for growth 101 and forming an n side electrode 119 on the n-type clad layer. COPYRIGHT: (C)2007,JPO&INPIT |
| format | Patent |
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SOLUTION: The method of manufacturing a perpendicular structure light emitting diode comprises the steps of forming a light emitting structure 115 in which an n-type clad layer 150a, an active layer 115b, and a p-type clad layer 115c are sequentially arranged on a substrate for growth 101 having a plurality of device regions A and at least one device separation region B, forming a p side electrode 106 on the light emitting structure, forming a first plating layer 136 on the p side electrode such that the plurality of device regions are connected, forming the pattern of a second plating layer 156 on the first plating layer of the device region, and removing the substrate for growth 101 and forming an n side electrode 119 on the n-type clad layer. 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SOLUTION: The method of manufacturing a perpendicular structure light emitting diode comprises the steps of forming a light emitting structure 115 in which an n-type clad layer 150a, an active layer 115b, and a p-type clad layer 115c are sequentially arranged on a substrate for growth 101 having a plurality of device regions A and at least one device separation region B, forming a p side electrode 106 on the light emitting structure, forming a first plating layer 136 on the p side electrode such that the plurality of device regions are connected, forming the pattern of a second plating layer 156 on the first plating layer of the device region, and removing the substrate for growth 101 and forming an n side electrode 119 on the n-type clad layer. 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SOLUTION: The method of manufacturing a perpendicular structure light emitting diode comprises the steps of forming a light emitting structure 115 in which an n-type clad layer 150a, an active layer 115b, and a p-type clad layer 115c are sequentially arranged on a substrate for growth 101 having a plurality of device regions A and at least one device separation region B, forming a p side electrode 106 on the light emitting structure, forming a first plating layer 136 on the p side electrode such that the plurality of device regions are connected, forming the pattern of a second plating layer 156 on the first plating layer of the device region, and removing the substrate for growth 101 and forming an n side electrode 119 on the n-type clad layer. COPYRIGHT: (C)2007,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD OF MANUFACTURING PERPENDICULAR STRUCTURE LIGHT EMITTING DIODE |
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