METHOD OF MANUFACTURING PERPENDICULAR STRUCTURE LIGHT EMITTING DIODE

PROBLEM TO BE SOLVED: To provide the method of manufacturing a perpendicular structure light emitting diode in which a chip separation process is easy. SOLUTION: The method of manufacturing a perpendicular structure light emitting diode comprises the steps of forming a light emitting structure 115 i...

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Bibliographische Detailangaben
Hauptverfasser: AHN SE HWAN, RYU YUNG-HO, SHIM DA MI, HWANG HAE YOUN
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide the method of manufacturing a perpendicular structure light emitting diode in which a chip separation process is easy. SOLUTION: The method of manufacturing a perpendicular structure light emitting diode comprises the steps of forming a light emitting structure 115 in which an n-type clad layer 150a, an active layer 115b, and a p-type clad layer 115c are sequentially arranged on a substrate for growth 101 having a plurality of device regions A and at least one device separation region B, forming a p side electrode 106 on the light emitting structure, forming a first plating layer 136 on the p side electrode such that the plurality of device regions are connected, forming the pattern of a second plating layer 156 on the first plating layer of the device region, and removing the substrate for growth 101 and forming an n side electrode 119 on the n-type clad layer. COPYRIGHT: (C)2007,JPO&INPIT