SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To suppress the high electric field of an insulting film in contact with a thin-film resistor. SOLUTION: When a voltage V is applied between aluminum electrodes 45a, 45b in a second layer, current flows to the side of an electrode pattern 43a from that of an electrode pattern 4...

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Hauptverfasser:	MIZUNO SHOJI, IWAMORI NORIYUKI, NAKAYAMA YOSHIAKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	MIZUNO SHOJI IWAMORI NORIYUKI NAKAYAMA YOSHIAKI
description	PROBLEM TO BE SOLVED: To suppress the high electric field of an insulting film in contact with a thin-film resistor. SOLUTION: When a voltage V is applied between aluminum electrodes 45a, 45b in a second layer, current flows to the side of an electrode pattern 43a from that of an electrode pattern 43b for functioning as a resistor. In this case, the aluminum electrode 45b of the second layer is positioned at the upper portion of a CrSi film 41 via a third TEOS film 44, thus applying the side of high potential V to the CrSi film 41. The application of a large voltage between the CrSi film 41 and the aluminum electrode 45b is prevented. COPYRIGHT: (C)2007,JPO&INPIT
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SOLUTION: When a voltage V is applied between aluminum electrodes 45a, 45b in a second layer, current flows to the side of an electrode pattern 43a from that of an electrode pattern 43b for functioning as a resistor. In this case, the aluminum electrode 45b of the second layer is positioned at the upper portion of a CrSi film 41 via a third TEOS film 44, thus applying the side of high potential V to the CrSi film 41. The application of a large voltage between the CrSi film 41 and the aluminum electrode 45b is prevented. 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SOLUTION: When a voltage V is applied between aluminum electrodes 45a, 45b in a second layer, current flows to the side of an electrode pattern 43a from that of an electrode pattern 43b for functioning as a resistor. In this case, the aluminum electrode 45b of the second layer is positioned at the upper portion of a CrSi film 41 via a third TEOS film 44, thus applying the side of high potential V to the CrSi film 41. The application of a large voltage between the CrSi film 41 and the aluminum electrode 45b is prevented. COPYRIGHT: (C)2007,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	SEMICONDUCTOR DEVICE
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