MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for not propagating cracking and chipping generated at an outer peripheral edge to the inside when thinning a semiconductor wafer by back surface grinding. SOLUTION: On a semiconductor substrate 10 provided with a first surface 10a where the semiconductor device 12 is formed and a second surface 10b on the opposite side of the first surface, a recess 14 is formed in an outer peripheral region where the semiconductor device 12 is not formed on the first surface 10a. The second surface 10b of the semiconductor substrate 10 is ground and the semiconductor substrate 10 is thinned. Since the recess 14 is formed, the thickness of the semiconductor substrate 10 at the position of the recess 14 after grinding it from the side of the second surface 10b is extremely small. Or, the semiconductor substrate 10 is separated at the recess 14 by grinding from the side of the second surface 10b. COPYRIGHT: (C)2007,JPO&INPIT