PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To effectively remove unreacted photo-acid generating agent and acid trap agent segregated in a watermark region in liquid immersion exposure, and suppress a development defect and dimensional accuracy degradation. SOLUTION: In this pattern forming method, after a chemical ampl...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TAKEISHI TOMOYUKI, ONISHI KIYONOBU, KAWAMURA DAISUKE
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!