PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To effectively remove unreacted photo-acid generating agent and acid trap agent segregated in a watermark region in liquid immersion exposure, and suppress a development defect and dimensional accuracy degradation. SOLUTION: In this pattern forming method, after a chemical amplification type resist film 13 is formed on a substrate 11, a first chemical solution is formed between the chemical amplification type resist film 13 and a projection optical system. Then, in the state wherein the first chemical solution is formed, a latent image of a desired pattern is formed in the resist film 13. Then, a second chemical solution consisting of an organic solvent which does not dissolve the resist film 13 and can dissolve the unreacted photo-acid generating agent and acid trap agent in the resist film 13 is supplied to the resist film 13. Then, heat treatment for the resist film 13 is carried out, and subsequently development treatment is carried out for the resist film 13. COPYRIGHT: (C)2007,JPO&INPIT