METHOD FOR MANUFACTURING SILICON SUBSTRATE HAVING SUPER-CLEAN SURFACE BY LOCAL SELECTIVE CLEANING AND ITS MANUFACTURING EQUIPMENT

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon substrate having a super-clean surface in which, when a silicon wafer is treated, a repetitive cleaning is abolished by applying a local selective cleaning. SOLUTION: The method for manufacturing the silicon substrate by the local...

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Hauptverfasser: KRUEGER JOHN, UZIEL YORAM, WACHS AMIR, HUBER WALTER
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon substrate having a super-clean surface in which, when a silicon wafer is treated, a repetitive cleaning is abolished by applying a local selective cleaning. SOLUTION: The method for manufacturing the silicon substrate by the local selective cleaning is a method for removing a surface impurity from a surface of a member to be treated. The method comprises the series of steps of (a) feeding a material having at least one impurity particle to the surface, (b) supplying a liquid to the surface of the material near at least one impurity particle, and (c) evaporating the liquid instantly to remove the impurity particle as a part of the liquid to be evaporated. Also, the manufacturing equipment using the same is provided. Laser heating is used for instant evaporation, and chucking can be performed near the surface particles so as to promote a removal of the surface particles detected in the evaporation step. COPYRIGHT: (C)2007,JPO&INPIT