SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device having a capacitor insulating film with high performance whose film thinning and making uniform is achievable with a high dielectric constant. SOLUTION: Transistors 13 and 14 formed on a semiconductor substrate are provided with a gate electrode formed through a gate insulating film, and first and second diffusion layers formed in the semiconductor substrate positioned at the both sides of the gate electrode. The first electrodes 15 and 16 are connected to the first diffusion layer of the transistor. A capacitor insulating film 17 formed on the first electrode is formed by a silicon oxide film containing substances whose diffusion speed is faster than that of Cu, and which is easier to react to oxygen than Cu. A second electrode formed on the capacitor insulating film is formed of one of a Cu layer and a Cu layer containing the substances. COPYRIGHT: (C)2007,JPO&INPIT