RELIABILITY EVALUATION METHOD FOR SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To allow a high-precision lifetime forecast for micro transistors such as an SOS (Silicon on Sapphire) and an FET and a guarantee on an increase in a drain current. SOLUTION: The reliability evaluation method, in a first step, measures a drain current Ids when a stress drain vo...

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description PROBLEM TO BE SOLVED: To allow a high-precision lifetime forecast for micro transistors such as an SOS (Silicon on Sapphire) and an FET and a guarantee on an increase in a drain current. SOLUTION: The reliability evaluation method, in a first step, measures a drain current Ids when a stress drain voltage is applied to the SOS or FET for each stress time, wherein the stress drain voltage, which is higher than a power supply voltage driving the FET and is lower than the breakdown voltage of the FET, is provided to a gate. In a second step, a drain current maximum value Idsmax is estimated through the measured drain current Ids and the stress time. In a third step, the relationship between the amount of change ΔIds of the drain current Ids and the stress time is plotted on a double logarithmic graph with the drain current maximum value Idsmax as a standard. In a fourth step, a hot carrier lifetime is estimated by drawing an approximate line 24-2 on the plotted graph. COPYRIGHT: (C)2007,JPO&INPIT
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SOLUTION: The reliability evaluation method, in a first step, measures a drain current Ids when a stress drain voltage is applied to the SOS or FET for each stress time, wherein the stress drain voltage, which is higher than a power supply voltage driving the FET and is lower than the breakdown voltage of the FET, is provided to a gate. In a second step, a drain current maximum value Idsmax is estimated through the measured drain current Ids and the stress time. In a third step, the relationship between the amount of change ΔIds of the drain current Ids and the stress time is plotted on a double logarithmic graph with the drain current maximum value Idsmax as a standard. In a fourth step, a hot carrier lifetime is estimated by drawing an approximate line 24-2 on the plotted graph. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title RELIABILITY EVALUATION METHOD FOR SEMICONDUCTOR DEVICE
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