METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON WAFER, SINGLE CRYSTAL SILICON WAFER, AND METHOD FOR INSPECTING WAFER

PROBLEM TO BE SOLVED: To provide a method for manufacturing a single crystal silicon wafer by which the single crystal silicon wafer having uniform gettering capability in the wafer surface can be manufactured without lowering productivity. SOLUTION: The method for producing the single crystal silicon wafer has a process for pulling and growing a silicon single crystal by a Czochralski method. When the constant diameter part in a range of at least 30-70% of the whole length in the pulling direction of an ingot is pulled, the temperature during crystal growth is set to be 1,370-1310°C, the ratio Gc/Ge of the temperature gradient values in the crystal growth axis direction (wherein, Gc is an average temperature gradient at the central part of the crystal; and Ge is an average temperature gradient at the outer peripheral part of the crystal) is set to be ≥1.14 and ≤1.28 when the temperature during crystal growth is 1,370-1310°C, nitrogen is added in an amount of ≥0.8×1014atoms/cm3, and the growing is performed by pulling the ingot at a prescribed pulling rate in response to the nitrogen concentration so that the oxidation-induced stacking faults are generated on the whole wafer surface in the case when a high temperature oxidation heat treatment is carried out. COPYRIGHT: (C)2007,JPO&INPIT