INSULATING FILM ETCHING SYSTEM

PROBLEM TO BE SOLVED: To provide an insulating film etching system which can effectively prevent the adhesion of particles to a substrate and is excellent in performance. SOLUTION: While the substrate 9 is held by a substrate holder 2 provided in a process chamber 1, an etching gas is introduced into the chamber 1 by a gas inlet system 3. An insulating film on the surface of the substrate 9 is etched by the action of active species and ions contained in plasma formed by a plasma forming means 4. After the completion of the etching, a control section 8 takes out the substrate 9 from the process chamber 1 by a transport robot 51 and evacuates the chamber 1 by an exhaust system. Then the control section 8 removes films deposited on exposed surfaces in the chamber 1 by the action of plasma formed by the plasma forming means 4 by introducing a cleaning gas by the inlet system 3. A cooling trap 12 provided at a level lower than the substrate holding surface is forcibly cooled and causes many films to be deposited by collecting gas molecules which tend to be deposited. The trap 12 is replaceable and the surface of the trap 12 has irregularity prevent the peeling of deposited films. The surface of the trap is composed of an oxide or insulator. COPYRIGHT: (C)2007,JPO&INPIT