MANUFACTURING METHOD OF LAPPING PLATE AND MECHANICAL LAPPING METHOD

MANUFACTURING METHOD OF LAPPING PLATE AND MECHANICAL LAPPING METHOD

PROBLEM TO BE SOLVED: To provide a lapping plate, reducing the load of CMP and shortening the machining time of CMP, in a lapping plate in the pre-process of CMP. SOLUTION: An SiC monocrystal substrate is mechanically lapped using a lapping plate formed with a predetermined flatness manufactured by...

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Hauptverfasser: MATSUDA TAKAMASA, TAKAUO TSUTOMU, TANIMOTO EIJI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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creator MATSUDA TAKAMASA
TAKAUO TSUTOMU
TANIMOTO EIJI
description PROBLEM TO BE SOLVED: To provide a lapping plate, reducing the load of CMP and shortening the machining time of CMP, in a lapping plate in the pre-process of CMP. SOLUTION: An SiC monocrystal substrate is mechanically lapped using a lapping plate formed with a predetermined flatness manufactured by a facing process of cutting the surface of the lapping plate made of material quality having a predetermined hardness and generating two kinds of grooves by machining, a shaving process of shaving with a circular-arc shaving tool, and a process of charging the lapping plate after the shaving process using a charging ring. COPYRIGHT: (C)2007,JPO&INPIT
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2007061961A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2007061961A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2007061961A3</originalsourceid><addsrcrecordid>eNrjZHD2dfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1PwcQwIAIkE-DiGuCo4-rkA5Zw9HP08nR194JIQ5TwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjAwNzAzNDSzNDRmChFAGjKK60</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MANUFACTURING METHOD OF LAPPING PLATE AND MECHANICAL LAPPING METHOD</title><source>esp@cenet</source><creator>MATSUDA TAKAMASA ; TAKAUO TSUTOMU ; TANIMOTO EIJI</creator><creatorcontrib>MATSUDA TAKAMASA ; TAKAUO TSUTOMU ; TANIMOTO EIJI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a lapping plate, reducing the load of CMP and shortening the machining time of CMP, in a lapping plate in the pre-process of CMP. SOLUTION: An SiC monocrystal substrate is mechanically lapped using a lapping plate formed with a predetermined flatness manufactured by a facing process of cutting the surface of the lapping plate made of material quality having a predetermined hardness and generating two kinds of grooves by machining, a shaving process of shaving with a circular-arc shaving tool, and a process of charging the lapping plate after the shaving process using a charging ring. COPYRIGHT: (C)2007,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20070315&amp;DB=EPODOC&amp;CC=JP&amp;NR=2007061961A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20070315&amp;DB=EPODOC&amp;CC=JP&amp;NR=2007061961A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUDA TAKAMASA</creatorcontrib><creatorcontrib>TAKAUO TSUTOMU</creatorcontrib><creatorcontrib>TANIMOTO EIJI</creatorcontrib><title>MANUFACTURING METHOD OF LAPPING PLATE AND MECHANICAL LAPPING METHOD</title><description>PROBLEM TO BE SOLVED: To provide a lapping plate, reducing the load of CMP and shortening the machining time of CMP, in a lapping plate in the pre-process of CMP. SOLUTION: An SiC monocrystal substrate is mechanically lapped using a lapping plate formed with a predetermined flatness manufactured by a facing process of cutting the surface of the lapping plate made of material quality having a predetermined hardness and generating two kinds of grooves by machining, a shaving process of shaving with a circular-arc shaving tool, and a process of charging the lapping plate after the shaving process using a charging ring. COPYRIGHT: (C)2007,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2007</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHD2dfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1PwcQwIAIkE-DiGuCo4-rkA5Zw9HP08nR194JIQ5TwMrGmJOcWpvFCam0HJzTXE2UM3tSA_PrW4IDE5NS-1JN4rwMjAwNzAzNDSzNDRmChFAGjKK60</recordid><startdate>20070315</startdate><enddate>20070315</enddate><creator>MATSUDA TAKAMASA</creator><creator>TAKAUO TSUTOMU</creator><creator>TANIMOTO EIJI</creator><scope>EVB</scope></search><sort><creationdate>20070315</creationdate><title>MANUFACTURING METHOD OF LAPPING PLATE AND MECHANICAL LAPPING METHOD</title><author>MATSUDA TAKAMASA ; TAKAUO TSUTOMU ; TANIMOTO EIJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2007061961A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2007</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MATSUDA TAKAMASA</creatorcontrib><creatorcontrib>TAKAUO TSUTOMU</creatorcontrib><creatorcontrib>TANIMOTO EIJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATSUDA TAKAMASA</au><au>TAKAUO TSUTOMU</au><au>TANIMOTO EIJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHOD OF LAPPING PLATE AND MECHANICAL LAPPING METHOD</title><date>2007-03-15</date><risdate>2007</risdate><abstract>PROBLEM TO BE SOLVED: To provide a lapping plate, reducing the load of CMP and shortening the machining time of CMP, in a lapping plate in the pre-process of CMP. SOLUTION: An SiC monocrystal substrate is mechanically lapped using a lapping plate formed with a predetermined flatness manufactured by a facing process of cutting the surface of the lapping plate made of material quality having a predetermined hardness and generating two kinds of grooves by machining, a shaving process of shaving with a circular-arc shaving tool, and a process of charging the lapping plate after the shaving process using a charging ring. COPYRIGHT: (C)2007,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
title MANUFACTURING METHOD OF LAPPING PLATE AND MECHANICAL LAPPING METHOD
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