MANUFACTURING METHOD OF LAPPING PLATE AND MECHANICAL LAPPING METHOD

PROBLEM TO BE SOLVED: To provide a lapping plate, reducing the load of CMP and shortening the machining time of CMP, in a lapping plate in the pre-process of CMP. SOLUTION: An SiC monocrystal substrate is mechanically lapped using a lapping plate formed with a predetermined flatness manufactured by...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUDA TAKAMASA, TAKAUO TSUTOMU, TANIMOTO EIJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a lapping plate, reducing the load of CMP and shortening the machining time of CMP, in a lapping plate in the pre-process of CMP. SOLUTION: An SiC monocrystal substrate is mechanically lapped using a lapping plate formed with a predetermined flatness manufactured by a facing process of cutting the surface of the lapping plate made of material quality having a predetermined hardness and generating two kinds of grooves by machining, a shaving process of shaving with a circular-arc shaving tool, and a process of charging the lapping plate after the shaving process using a charging ring. COPYRIGHT: (C)2007,JPO&INPIT